DZT5551Q Series

NPN, 160V, 0.6A, SOT223

Catalog

NPN, 160V, 0.6A, SOT223

Part	Frequency - Transition	Grade	Current - Collector (Ic) (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package
Diodes Inc DZT5551Q-13	300 MHz	Automotive	600 mA	TO-261-4 TO-261AA	200 mV	-55 °C	150 °C	2 W	80	AEC-Q101	Surface Mount	160 V	50 µA	NPN	SOT-223-3
Diodes Inc DZT5551-13	300 MHz		600 mA	TO-261-4 TO-261AA	200 mV	-55 °C	150 °C	1 W	80		Surface Mount	160 V	50 nA	NPN	SOT-223-3

Catalog

NPN, 160V, 0.6A, SOT223

Key Features

• BVCEO> 160V

• BVEBO> 6V

• IC= 600mA Continuous Collector Current

• Low Saturation Voltage (150mV max @10mA)

• hFEspecified up to 50mA for a high gain hold up

• Complementary PNP Type: DZT5401

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.