DMN3066LVTQ-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN3066LVTQ-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3066LVTQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3.6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power Dissipation (Max) [Max] | 900 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 67 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.11 | |
| 30000 | $ 0.10 | |||
| 50000 | $ 0.10 | |||
| 100000 | $ 0.09 | |||
Description
General part information
DMN3066LVTQ Series
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: backlighting, DC-DC converters, and power-management functions.
Documents
Technical documentation and resources