DMN3066LVTQ Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Qualification	Package / Case	Grade	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMN3066LVTQ-13	67 mOhm	3.6 A	900 mW	-55 °C	150 °C	30 V	12 V	1.5 V	N-Channel	4 nC	328 pF	Surface Mount	MOSFET (Metal Oxide)	AEC-Q101	SOT-23-6 Thin TSOT-23-6	Automotive	2.5 V 4.5 V

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low-Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMN3066LVTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: backlighting, DC-DC converters, and power-management functions.