IR2183SPBF

NRND

Infineon Technologies

THE IR2183S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Datasheet +1

IR2183SPBF

NRND

Infineon Technologies

THE IR2183S IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH SHOOT THROUGH PROTECTION (8 LEAD SOIC PACKAGE)

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2183SPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2.3 A
Current - Peak Output (Source, Sink) [custom]	1.9 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	2.7 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	20 ns
Rise / Fall Time (Typ) [custom]	40 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2183 Series

Part	Number of Drivers	Gate Type	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Voltage - Supply [Max]	Voltage - Supply [Min]	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Input Type	Package / Case	Package / Case
Infineon Technologies IR2183S	2	IGBT N-Channel MOSFET	Surface Mount	8-SOIC	3.9 mm	0.154 in	20 V	10 VDC	600 V	2.3 A	1.9 A	Independent	150 °C	-40 °C	0.8 V 2.7 V	Half-Bridge	20 ns	40 ns	8-SOIC	Inverting Non-Inverting
Infineon Technologies IR2183	2	IGBT N-Channel MOSFET	Through Hole	8-DIP			20 V	10 VDC	600 V	2.3 A	1.9 A	Independent	150 °C	-40 °C	0.8 V 2.7 V	Half-Bridge	20 ns	40 ns	8-PDIP	Inverting Non-Inverting	0.3 in	7.62 mm
Infineon Technologies IR2183SPBF	2	IGBT N-Channel MOSFET	Surface Mount	8-SOIC	3.9 mm	0.154 in	20 V	10 VDC	600 V	2.3 A	1.9 A	Independent	150 °C	-40 °C	0.8 V 2.7 V	Half-Bridge	20 ns	40 ns	8-SOIC	Inverting Non-Inverting
Infineon Technologies IR2183STRPBF	2	IGBT N-Channel MOSFET	Surface Mount	8-SOIC	3.9 mm	0.154 in	20 V	10 VDC	600 V	2.3 A	1.9 A	Independent	150 °C	-40 °C	0.8 V 2.7 V	Half-Bridge	20 ns	40 ns	8-SOIC	Inverting Non-Inverting

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.02
		10	$ 3.61
		95	$ 2.96
		285	$ 2.81
		570	$ 2.52
		1045	$ 2.12
		2565	$ 2.02
		5035	$ 1.94
Newark	Each	1	$ 3.94
		10	$ 2.97
		25	$ 2.81
		50	$ 2.64
		100	$ 2.48
		250	$ 2.37
		500	$ 2.32

Description

General part information

IR2183 Series

The IR2183SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Gate Driver with dependent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Application Note AN-978 HV Floating MOS-Gate Driver ICs

Application Notes