IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Number of Drivers | Gate Type | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Voltage - Supply [Max] | Voltage - Supply [Min] | High Side Voltage - Max (Bootstrap) [Max] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Channel Type | Operating Temperature [Max] | Operating Temperature [Min] | Logic Voltage - VIL, VIH | Driven Configuration | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Supplier Device Package | Input Type | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 | IGBT N-Channel MOSFET | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 10 VDC | 600 V | 2.3 A | 1.9 A | Independent | 150 °C | -40 °C | 0.8 V 2.7 V | Half-Bridge | 20 ns | 40 ns | 8-SOIC | Inverting Non-Inverting | ||
Infineon Technologies | 2 | IGBT N-Channel MOSFET | Through Hole | 8-DIP | 20 V | 10 VDC | 600 V | 2.3 A | 1.9 A | Independent | 150 °C | -40 °C | 0.8 V 2.7 V | Half-Bridge | 20 ns | 40 ns | 8-PDIP | Inverting Non-Inverting | 0.3 in | 7.62 mm | ||
Infineon Technologies | 2 | IGBT N-Channel MOSFET | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 10 VDC | 600 V | 2.3 A | 1.9 A | Independent | 150 °C | -40 °C | 0.8 V 2.7 V | Half-Bridge | 20 ns | 40 ns | 8-SOIC | Inverting Non-Inverting | ||
Infineon Technologies | 2 | IGBT N-Channel MOSFET | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 20 V | 10 VDC | 600 V | 2.3 A | 1.9 A | Independent | 150 °C | -40 °C | 0.8 V 2.7 V | Half-Bridge | 20 ns | 40 ns | 8-SOIC | Inverting Non-Inverting |