SSM6J409TU(TE85L,F

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 9.5A UF6

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 9.5A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J409TU(TE85L,F

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	22.1 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Toshiba Semiconductor and Storage SSM6J409TU(TE85L,F	150 °C	20 V	6-SMD Flat Leads	1 W	15 nC	Surface Mount	MOSFET (Metal Oxide)	1 V	9.5 A	8 V	1100 pF	22.1 mOhm	P-Channel	1.5 V 4.5 V	UF6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 9.5A (Ta) 1W (Ta) Surface Mount UF6

Technical documentation and resources