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MOSFET P-CH 20V 9.5A UF6
| Part | Operating Temperature | Drain to Source Voltage (Vdss) | Package / Case | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 20 V | 6-SMD Flat Leads | 1 W | 15 nC | Surface Mount | MOSFET (Metal Oxide) | 1 V | 9.5 A | 8 V | 1100 pF | 22.1 mOhm | P-Channel | 1.5 V 4.5 V | UF6 |