IDD05SG60CXTMA2

Obsolete

Infineon Technologies

DIODE SIL CARB 600V 5A TO252-3

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Obsolete

Infineon Technologies

DIODE SIL CARB 600V 5A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDD05SG60CXTMA2

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO252-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Reverse Recovery Time (trr)	Package / Case	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
Infineon Technologies IDD05SG60CXTMA2	5 A	600 V	SiC (Silicon Carbide) Schottky	2.3 V	Surface Mount	No Recovery Time	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 µA	110 pF	175 ░C	-55 C	PG-TO252-3
Infineon Technologies IDD05SG60CXTMA1	5 A	600 V	SiC (Silicon Carbide) Schottky	2.3 V	Surface Mount	No Recovery Time	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 µA	110 pF	175 ░C	-55 C	PG-TO252-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 5A Surface Mount PG-TO252-3

Technical documentation and resources