IDD05SG60 Series

Catalog

DIODE SIL CARB 600V 5A TO252-3

Part	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Reverse Recovery Time (trr)	Package / Case	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package
Infineon Technologies IDD05SG60CXTMA2	5 A	600 V	SiC (Silicon Carbide) Schottky	2.3 V	Surface Mount	No Recovery Time	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 µA	110 pF	175 ░C	-55 C	PG-TO252-3
Infineon Technologies IDD05SG60CXTMA1	5 A	600 V	SiC (Silicon Carbide) Schottky	2.3 V	Surface Mount	No Recovery Time	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	30 µA	110 pF	175 ░C	-55 C	PG-TO252-3