Specification	MBR500100CTR

Current - Average Rectified (Io) (per Diode)	250 A
Current - Reverse Leakage	1 mA
Diode Configuration	Common Anode
Diode Pair Count	1 pair
Mounting Type	Chassis Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Twin Tower
Package Name	Twin Tower
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)	100 V
Voltage - Forward (Vf) (Max)	880 mV

MBR500100 Series

Part	Technology	Current - Average Rectified (Io) (per Diode)	Package Name	Voltage - DC Reverse (Vr) (Max)	Diode Pair Count	Diode Configuration	Voltage - Forward (Vf) (Max)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Package / Case	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Reverse Leakage	Mounting Type
GeneSiC Semiconductor MBR500100CT	Schottky	250 A	Twin Tower	100 V	1 pair	Common Cathode	880 mV	500 ns	200 mA	Twin Tower	150 °C	-55 °C	1 mA	Chassis Mount
GeneSiC Semiconductor MBR500100CTR	Reverse Polarity Schottky	250 A	Twin Tower	100 V	1 pair	Common Anode	880 mV	500 ns	200 mA	Twin Tower	150 °C	-55 °C	1 mA	Chassis Mount
GeneSiC Semiconductor MBR500100CT	Schottky	250 A	Twin Tower	100 V	1 pair	Common Cathode	880 mV	500 ns	200 mA	Twin Tower	150 °C	-55 °C	1 mA	Chassis Mount
GeneSiC Semiconductor MBR500100CTR	Reverse Polarity Schottky	250 A	Twin Tower	100 V	1 pair	Common Anode	880 mV	500 ns	200 mA	Twin Tower	150 °C	-55 °C	1 mA	Chassis Mount

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