MBR500100 Series
Manufacturer: GeneSiC Semiconductor
DIODE MOD SCHOT 100V 250A 2TOWER
| Part | Technology | Current - Average Rectified (Io) (per Diode) | Package Name | Voltage - DC Reverse (Vr) (Max) | Diode Pair Count | Diode Configuration | Voltage - Forward (Vf) (Max) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Reverse Leakage | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Schottky | 250 A | Twin Tower | 100 V | 1 pair | Common Cathode | 880 mV | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | 1 mA | Chassis Mount |
GeneSiC Semiconductor | Reverse Polarity Schottky | 250 A | Twin Tower | 100 V | 1 pair | Common Anode | 880 mV | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | 1 mA | Chassis Mount |
GeneSiC Semiconductor | Schottky | 250 A | Twin Tower | 100 V | 1 pair | Common Cathode | 880 mV | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | 1 mA | Chassis Mount |
GeneSiC Semiconductor | Reverse Polarity Schottky | 250 A | Twin Tower | 100 V | 1 pair | Common Anode | 880 mV | 500 ns | 200 mA | Twin Tower | 150 °C | -55 °C | 1 mA | Chassis Mount |