APTC60AM42F2G

Obsolete

Microsemi Corporation

MOSFET 2N-CH 600V 66A SP2

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Obsolete

Microsemi Corporation

MOSFET 2N-CH 600V 66A SP2

Technical Specifications

Parameters and characteristics for this part

Specification	APTC60AM42F2G

Configuration	2 N Channel
Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	600 V
Gate Charge (Qg) (Max) @ Vgs	510 nC
Input Capacitance (Ciss) (Max) @ Vds	14600 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP2
Power - Max [Max]	416 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	SP2
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Microsemi Corporation APTC60AM42F2G	600 V	5 V	416 W	14600 pF	MOSFET (Metal Oxide)	Chassis Mount	SP2	42 mOhm	66 A	2 N Channel	150 °C	-40 °C	SP2	510 nC
Microsemi Corporation APTC60DDAM70CT1G	600 V	3.9 V	250 W		MOSFET (Metal Oxide)	Chassis Mount	SP1		39 A	2 N-Channel (Dual)	150 °C	-40 °C	SP1	259 nC	7000 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 600V 66A 416W Chassis Mount SP2

Technical documentation and resources