MOSFET 2N-CH 600V 66A SP2
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | 600 V | 5 V | 416 W | 14600 pF | MOSFET (Metal Oxide) | Chassis Mount | SP2 | 42 mOhm | 66 A | 2 N Channel | 150 °C | -40 °C | SP2 | 510 nC | |
Microsemi Corporation | 600 V | 3.9 V | 250 W | MOSFET (Metal Oxide) | Chassis Mount | SP1 | 39 A | 2 N-Channel (Dual) | 150 °C | -40 °C | SP1 | 259 nC | 7000 pF |