TSM4N60ECP ROG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 600V 4A TO252

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Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 600V 4A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4N60ECP ROG

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	545 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	86.2 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Taiwan Semiconductor Corporation TSM4N60ECP ROG	30 V	4 A	N-Channel	2.5 Ohm	86.2 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	600 V	Surface Mount	5 V	TO-252 (DPAK)	545 pF	MOSFET (Metal Oxide)	150 °C	10 V	12 nC

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General part information

N-Channel 600 V 4A (Tc) 86.2W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available