Beta
⌘K
MOSFET N-CHANNEL 600V 4A TO252
| Part | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Technology | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 30 V | 4 A | N-Channel | 2.5 Ohm | 86.2 W | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 600 V | Surface Mount | 5 V | TO-252 (DPAK) | 545 pF | MOSFET (Metal Oxide) | 150 °C | 10 V | 12 nC |