TSM4N60 Series
Manufacturer: Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 4A TO252
| Part | Technology | Rds On (Max) | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Package / Case | Current - Continuous Drain (Id) (Tc) | Power Dissipation (Max) | Gate Charge (Max) | Package Name | Vgs (Max) | Mounting Type | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | MOSFET (Metal Oxide) | 2.5 Ohm | N-Channel | 600 V | 10 V | 5 V | 545 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 A | 86.2 W | 12 nC | TO-252 (DPAK) | 30 V | Surface Mount | 150 °C |