IMBG65R015M2HXTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 115 A, 650 V, 0.0132 OHM, TO-263

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IMBG65R015M2HXTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 115 A, 650 V, 0.0132 OHM, TO-263

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMBG65R015M2HXTMA1

Current - Continuous Drain (Id) @ 25°C	115 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	15 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	79 nC
Input Capacitance (Ciss) (Max) @ Vds	2792 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	416 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	PG-TO263-7-12
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.6 V

IMBG65R015 Series

Part	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IMBG65R015M2HXTMA1	Surface Mount	416 W	650 V	18 mOhm	5.6 V	PG-TO263-7-12	2792 pF	-55 °C	175 ░C	115 A	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	-7 V 23 V	15 V	20 V	N-Channel	79 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 19.89
		10	$ 18.34
		25	$ 17.52
		100	$ 15.67
		250	$ 14.94
		500	$ 14.22
	Digi-Reel®	1	$ 19.89
		10	$ 18.34
		25	$ 17.52
		100	$ 15.67
		250	$ 14.94
		500	$ 14.22
	Tape & Reel (TR)	1000	$ 13.40
Newark	Each (Supplied on Cut Tape)	1	$ 14.35
		10	$ 12.65
		25	$ 12.24
		50	$ 11.85
		100	$ 11.44
		250	$ 10.87
		500	$ 10.30
		1000	$ 9.72

Description

General part information

IMBG65R015 Series

The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources