Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 115 A, 650 V, 0.0132 OHM, TO-263
| Part | Mounting Type | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 416 W | 650 V | 18 mOhm | 5.6 V | PG-TO263-7-12 | 2792 pF | -55 °C | 175 ░C | 115 A | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | -7 V 23 V | 15 V | 20 V | N-Channel | 79 nC |