IDK12G65C5XTMA1

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Infineon Technologies

DIODE SIL CARB 650V 12A TO263-2

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Unknown

Infineon Technologies

DIODE SIL CARB 650V 12A TO263-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDK12G65C5XTMA1

Capacitance @ Vr, F	360 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	2.1 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Reverse Recovery Time (trr)	Supplier Device Package	Capacitance @ Vr, F	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Technology
Infineon Technologies IDK12G65C5XTMA1	0 ns	PG-TO263-2	360 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.1 mA	Surface Mount	12 A	175 ░C	-55 C	No Recovery Time	650 V	1.8 V	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 12A Surface Mount PG-TO263-2

Technical documentation and resources