DIODE SIL CARB 650V 12A TO263-2
| Part | Reverse Recovery Time (trr) | Supplier Device Package | Capacitance @ Vr, F | Package / Case | Current - Reverse Leakage @ Vr | Mounting Type | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 0 ns | PG-TO263-2 | 360 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2.1 mA | Surface Mount | 12 A | 175 ░C | -55 C | No Recovery Time | 650 V | 1.8 V | SiC (Silicon Carbide) Schottky |