Specification	XPN6R706NC,L1XHQ

Current - Continuous Drain (Id) (Ta)	40 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	35 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2000 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Package Length	3.1 mm
Package Name	8-TSON Advance-WF
Package Width	3.1 mm
Power Dissipation (Max)	840 mW, 100 W
Qualification	AEC-Q101
Rds On (Max)	6.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

XPN6R706NC Series

Part	Package Name	Package Width	Package Length	Grade	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Vgs(th) (Max)	FET Type	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max)	Technology	Vgs (Max)	Qualification
Toshiba Semiconductor and Storage XPN6R706NC,L1XHQ	8-TSON Advance-WF	3.1 mm	3.1 mm	Automotive	100 W 840 mW	10 V	4.5 V	60 V	Surface Mount	6.7 mOhm	40 A	35 nC	2.5 V	N-Channel	8-PowerVDFN	175 °C	2000 pF	MOSFET (Metal Oxide)	20 V	AEC-Q101

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