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MOSFET N-CH 60V 40A 8TSON
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | Supplier Device Package [y] | Supplier Device Package | Supplier Device Package [x] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 100 W 840 mW | 2000 pF | 20 V | Surface Mount | 2.5 V | 3.1 | 8-TSON Advance-WF | 3.1 | 40 A | 8-PowerVDFN | 6.7 mOhm | 35 nC | MOSFET (Metal Oxide) | 60 V | 4.5 V 10 V | 175 °C | N-Channel |