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BCP51H6327XTSA1 - BCP51H6327XTSA1

BCP51H6327XTSA1

Infineon Technologies

TRANS GP BJT PNP 45V 1A 2000MW AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

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BCP51H6327XTSA1 - BCP51H6327XTSA1

BCP51H6327XTSA1

Infineon Technologies

TRANS GP BJT PNP 45V 1A 2000MW AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBCP51H6327XTSA1
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Frequency - Transition125 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]2 W
Supplier Device PackagePG-SOT223-4-10
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BCP51 Series

Bipolar (BJT) Transistor PNP 45 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-10

Documents

Technical documentation and resources