BCP5116H6327XTSA1

Infineon Technologies

TRANS GP BJT PNP 45V 1A 2000MW 4-PIN(3+TAB) SOT-223 AUTOMOTIVE AEC-Q101

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Infineon Technologies

TRANS GP BJT PNP 45V 1A 2000MW 4-PIN(3+TAB) SOT-223 AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	BCP5116H6327XTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	125 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	PG-SOT223-4-24
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

Part	Supplier Device Package	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Transistor Type
Infineon Technologies BCP5116E6327HTSA1	PG-SOT223-4	150 °C	100 nA	45 V	Surface Mount	2 W	100	125 MHz	TO-261-4 TO-261AA	500 mV	1 A	PNP
Infineon Technologies BCP5116H6433XTMA1	PG-SOT223-4-10	150 °C	100 nA	45 V	Surface Mount	2 W	100	125 MHz	TO-261-4 TO-261AA	500 mV	1 A	PNP
Infineon Technologies BCP51H6327XTSA1	PG-SOT223-4-10	150 °C	100 nA	45 V	Surface Mount	2 W	40	125 MHz	TO-261-4 TO-261AA	500 mV	1 A	PNP
Infineon Technologies BCP5116E6433HTMA1	PG-SOT223-4	150 °C	100 nA	45 V	Surface Mount	2 W	100	125 MHz	TO-261-4 TO-261AA	500 mV	1 A	PNP
Infineon Technologies BCP5116H6327XTSA1	PG-SOT223-4-24	150 °C	100 nA	45 V	Surface Mount	2 W	100	125 MHz	TO-261-4 TO-261AA	500 mV	1 A	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 45 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-24

Technical documentation and resources