DF11MR12W1M1PB11BPSA1

Obsolete

Infineon Technologies

SIC 2N-CH 1200V 50A AG-EASY1B

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Obsolete

Infineon Technologies

SIC 2N-CH 1200V 50A AG-EASY1B

Technical Specifications

Parameters and characteristics for this part

Specification	DF11MR12W1M1PB11BPSA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	124 nC
Input Capacitance (Ciss) (Max) @ Vds	3680 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	22.5 mOhm
Supplier Device Package	AG-EASY1B-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.55 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Technology	Configuration	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Infineon Technologies DF11MR12W1M1PB11BPSA1	3680 pF	150 °C	-40 °C	AG-EASY1B-2	Silicon Carbide (SiC)	2 N-Channel (Dual)	22.5 mOhm	50 A	124 nC	Module	Chassis Mount	1200 V	1.2 kV	5.55 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 50A (Tj) Chassis Mount AG-EASY1B-2

Technical documentation and resources

No documents available