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SIC 2N-CH 1200V 50A AG-EASY1B
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Technology | Configuration | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3680 pF | 150 °C | -40 °C | AG-EASY1B-2 | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 22.5 mOhm | 50 A | 124 nC | Module | Chassis Mount | 1200 V | 1.2 kV | 5.55 V |