SPD07N20GBTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 200V 7A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 200V 7A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPD07N20GBTMA1

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	530 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies SPD07N20GBTMA1	530 pF	N-Channel	MOSFET (Metal Oxide)	200 V	-55 °C	175 ░C	400 mOhm	7 A	10 V	40 W	20 V	Surface Mount	31.5 nC	PG-TO252-3	DPAK (2 Leads + Tab) SC-63 TO-252-3
Infineon Technologies SPD07N60S5T		N-Channel	MOSFET (Metal Oxide)	600 V	-55 °C	150 °C		7.3 A	10 V	83 W	20 V	Surface Mount		PG-TO252-3-11	DPAK (2 Leads + Tab) SC-63 TO-252-3	35 nC	600 mOhm	5.5 V	970 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 7A (Tc) 40W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources