MOSFET N-CH 200V 7A TO252-3
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 530 pF | N-Channel | MOSFET (Metal Oxide) | 200 V | -55 °C | 175 ░C | 400 mOhm | 7 A | 10 V | 40 W | 20 V | Surface Mount | 31.5 nC | PG-TO252-3 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | ||||
Infineon Technologies | N-Channel | MOSFET (Metal Oxide) | 600 V | -55 °C | 150 °C | 7.3 A | 10 V | 83 W | 20 V | Surface Mount | PG-TO252-3-11 | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 35 nC | 600 mOhm | 5.5 V | 970 pF |