STGY50NC60WD

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STMicroelectronics

TRANS IGBT CHIP N-CH 600V 110A 278W 3-PIN(3+TAB) MAX247 TUBE

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STMicroelectronics

TRANS IGBT CHIP N-CH 600V 110A 278W 3-PIN(3+TAB) MAX247 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	STGY50NC60WD

Current - Collector (Ic) (Max) [Max]	110 A
Current - Collector Pulsed (Icm)	180 A
Gate Charge	195 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	278 W
Reverse Recovery Time (trr)	55 ns
Supplier Device Package	MAX247™
Switching Energy	365 µJ, 560 µJ
Td (on/off) @ 25°C	52 ns, 240 ns
Test Condition	40 A, 15 V, 390 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Ultra fast "W" series

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Test Condition	Switching Energy	Power - Max [Max]	Gate Charge	Reverse Recovery Time (trr)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STGY50NC60WD	600 V	2.6 V	52 ns 240 ns	180 A	MAX247™	TO-247-3	110 A	10 Ohm 15 V 40 A 390 V	365 µJ 560 µJ	278 W	195 nC	55 ns	Through Hole	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior.

Technical documentation and resources