Catalog
Ultra fast "W" series
Description
AI
This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
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Ultra fast "W" series
Ultra fast "W" series
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Td (on/off) @ 25°C | Current - Collector Pulsed (Icm) | Supplier Device Package | Package / Case | Current - Collector (Ic) (Max) [Max] | Test Condition | Switching Energy | Power - Max [Max] | Gate Charge | Reverse Recovery Time (trr) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 600 V | 2.6 V | 52 ns 240 ns | 180 A | MAX247™ | TO-247-3 | 110 A | 10 Ohm 15 V 40 A 390 V | 365 µJ 560 µJ | 278 W | 195 nC | 55 ns | Through Hole | -55 °C | 150 °C |