GT40RR21(STA1,E

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Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

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Toshiba Semiconductor and Storage

IGBT 1200V 40A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	GT40RR21(STA1,E

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	200 A
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	230 W
Reverse Recovery Time (trr)	600 ns
Supplier Device Package	TO-3P(N)
Switching Energy	-
Switching Energy	540 µJ
Test Condition	40 A, 10 Ohm, 20 V, 280 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	Package / Case	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Switching Energy	Switching Energy	Supplier Device Package	Current - Collector Pulsed (Icm)	Test Condition	Operating Temperature	Power - Max [Max]
Toshiba Semiconductor and Storage GT40RR21(STA1,E	40 A	Through Hole	SC-65-3 TO-3P-3	600 ns	1200 V	2.8 V	-	540 µJ	TO-3P(N)	200 A	10 Ohm 20 V 40 A 280 V	175 °C	230 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)

Technical documentation and resources