GT40RR21 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
IGBTS, 1350 V/40 A IGBT, BUILT-IN DIODES, TO-3P(N)
| Part | Test Condition Current | Test Condition Voltage | Test Condition Resistance | Test Condition Voltage (Secondary) | Input Type | Current - Collector (Ic) (Max) | Package Name | Voltage - Collector Emitter Breakdown (Max) | Mounting Type | Vce(on) (Max) | Reverse Recovery Time (trr) | Package / Case | Power - Max | Operating Temperature | Current - Collector Pulsed (Icm) | Switching Energy | Switching Energy (Off) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 40 A | 280 V | 10 Ohm | 20 V | Standard | 40 A | TO-3P(N) | 1200 V | Through Hole | 2.8 V | 600 ns | SC-65-3 TO-3P-3 | 230 W | 175 °C | 200 A | 540 µJ | 540 µJ |