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IGBT 1200V 40A TO3P
| Part | Current - Collector (Ic) (Max) [Max] | Mounting Type | Package / Case | Reverse Recovery Time (trr) | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce(on) (Max) @ Vge, Ic | Switching Energy | Switching Energy | Supplier Device Package | Current - Collector Pulsed (Icm) | Test Condition | Operating Temperature | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 40 A | Through Hole | SC-65-3 TO-3P-3 | 600 ns | 1200 V | 2.8 V | - | 540 µJ | TO-3P(N) | 200 A | 10 Ohm 20 V 40 A 280 V | 175 °C | 230 W |