APT70GR65B2SCD30

Obsolete

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

Technical Specifications

Parameters and characteristics for this part

Specification	APT70GR65B2SCD30

Current - Collector (Ic) (Max) [Max]	134 A
Current - Collector Pulsed (Icm)	260 A
Gate Charge	305 nC
IGBT Type	NPT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	595 W
Supplier Device Package	T-MAX™ [B2]
Td (on/off) @ 25°C	170 ns, 19 ns
Test Condition	433 V, 15 V, 4.3 Ohm, 70 A
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	IGBT Type	Package / Case	Supplier Device Package	Current - Collector Pulsed (Icm)	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Mounting Type	Test Condition	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge
Microsemi Corporation APT70GR65B2SCD30	NPT	TO-247-3	T-MAX™ [B2]	260 A	595 W	650 V	2.4 V	Through Hole	4.3 Ohm 15 V 70 A 433 V	134 A	19 ns 170 ns	-55 °C	150 °C	305 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 650 V 134 A 595 W Through Hole T-MAX™ [B2]

Technical documentation and resources

No documents available