Beta
⌘K
INSULATED GATE BIPOLAR TRANSISTO
| Part | IGBT Type | Package / Case | Supplier Device Package | Current - Collector Pulsed (Icm) | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) | Vce(on) (Max) @ Vge, Ic | Mounting Type | Test Condition | Current - Collector (Ic) (Max) [Max] | Td (on/off) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | NPT | TO-247-3 | T-MAX™ [B2] | 260 A | 595 W | 650 V | 2.4 V | Through Hole | 4.3 Ohm 15 V 70 A 433 V | 134 A | 19 ns 170 ns | -55 °C | 150 °C | 305 nC |