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STB25N80K5 - D2Pak

STB25N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.190 OHM TYP., 19.5 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet+17
STB25N80K5 - D2Pak

STB25N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.190 OHM TYP., 19.5 A MDMESH K5 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB25N80K5
Current - Continuous Drain (Id) @ 25°C19.5 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]250 W
Rds On (Max) @ Id, Vgs [Max]260 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.11
10$ 4.29
100$ 3.47
500$ 3.08
Digi-Reel® 1$ 5.11
10$ 4.29
100$ 3.47
500$ 3.08
Tape & Reel (TR) 1000$ 2.64
2000$ 2.49
NewarkEach (Supplied on Cut Tape) 1$ 7.38
10$ 5.43
25$ 5.41
50$ 4.86
100$ 4.30
250$ 4.29
500$ 3.82
1000$ 3.73

Description

General part information

STB25N80K5 Series

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.