STB25N80K5 Series

N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a D2PAK package

Catalog

N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a D2PAK package

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Package / Case
STMicroelectronics STB25N80K5	5 V	10 V	30 V	Surface Mount	260 mOhm	1600 pF	19.5 A	-55 °C	150 °C	800 V	250 W	TO-263 (D2PAK)	40 nC	MOSFET (Metal Oxide)	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Catalog

N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a D2PAK package

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.