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DMT15H017LPS-13 - PowerDI5060-8

DMT15H017LPS-13

Active
Diodes Inc

MOSFET ENHANCEMENT N-CHANNEL 150V 8-PIN POWERDI5060 T/R

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DMT15H017LPS-13 - PowerDI5060-8

DMT15H017LPS-13

Active
Diodes Inc

MOSFET ENHANCEMENT N-CHANNEL 150V 8-PIN POWERDI5060 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT15H017LPS-13
Current - Continuous Drain (Id) @ 25°C9.4 A
Current - Continuous Drain (Id) @ 25°C58 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]50 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3369 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)1.3 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs17.5 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.60
10$ 1.31
100$ 1.02
500$ 0.86
1000$ 0.70
Digi-Reel® 1$ 1.60
10$ 1.31
100$ 1.02
500$ 0.86
1000$ 0.70
Tape & Reel (TR) 2500$ 0.64
5000$ 0.62

Description

General part information

DMT15H017LPS Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.