DMT15H017LPS Series

150V N-Channel Enhancement Mode MOSFET

Catalog

150V N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Grade	FET Type	Technology	Qualification	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMT15H017LPS-13	Surface Mount	20 V	2.6 V	PowerDI5060-8	-55 °C	150 °C	50 nC	3369 pF	17.5 mOhm	4.5 V 10 V	8-PowerTDFN	1.3 W	150 V	Automotive	N-Channel	MOSFET (Metal Oxide)	AEC-Q101	9.4 A	58 A

Catalog

150V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• <1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.