IR2113PBF

NRND

Infineon Technologies

THE IR2113 IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (14 LEAD PDIP PACKAGE)

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DocumentsApplication Note EN Datasheet

IR2113PBF

NRND

Infineon Technologies

THE IR2113 IS A 600 V HIGH-SIDE AND LOW-SIDE GATE DRIVER IC WITH SHUTDOWN (14 LEAD PDIP PACKAGE)

Deep-Dive with AI

DocumentsApplication Note EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2113PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Rise / Fall Time (Typ) [custom]	25 ns
Rise / Fall Time (Typ) [custom]	17 ns
Supplier Device Package	14-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	3.3 V

IR2113 Series

Part	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Number of Drivers	Package / Case [x]	Package / Case	Package / Case [y]	Gate Type	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Package / Case [custom]	Package / Case [custom]
Infineon Technologies 98-0247	Half-Bridge	600 V	16-SOIC	Independent	25 ns	17 ns	3.3 V	20 V	Surface Mount	150 °C	-40 °C	9.5 V	6 V	2	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A
Infineon Technologies IR2113-1PBF	Half-Bridge	600 V		Independent	25 ns	17 ns	3.3 V	20 V	Through Hole	150 °C	-40 °C	9.5 V	6 V	2		14-DIP		IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A	7.62 mm	13 Leads	0.3 in
Infineon Technologies 98-0119PBF	Half-Bridge	600 V	16-PDIP	Independent	25 ns	17 ns	3.3 V	20 V	Through Hole	150 °C	-40 °C	9.5 V	6 V	2		14 Leads 16-DIP		IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A				0.3 in	7.62 mm
Infineon Technologies IR2113PBF	Half-Bridge	600 V	14-DIP	Independent	25 ns	17 ns	3.3 V	20 V	Through Hole	150 °C	-40 °C	9.5 V	6 V	2	0.3 "	14-DIP	7.62 mm	IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A
Infineon Technologies IR2113STR	Half-Bridge	600 V	16-SOIC	Independent	25 ns	17 ns	3.3 V	20 V	Surface Mount	150 °C	-40 °C	9.5 V	6 V	2	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A
Infineon Technologies IR2113	Half-Bridge	600 V	14-DIP	Independent	25 ns	17 ns	3.3 V	20 V	Through Hole	150 °C	-40 °C	9.5 V	6 V	2	0.3 "	14-DIP	7.62 mm	IGBT MOSFET N-Channel MOSFET	Non-Inverting	2 A	2 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.20
		10	$ 1.89
		25	$ 1.83
		100	$ 1.76
		250	$ 1.67
Digikey	Tube	1	$ 3.72
		10	$ 3.35
		25	$ 3.16
		100	$ 2.74
		250	$ 2.60
		500	$ 2.33
		1000	$ 1.97
		2500	$ 1.87
		5000	$ 1.80

Description

General part information

IR2113 Series

The IR2113PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.

Documents

Technical documentation and resources

Application Note EN

Datasheet