IR2113-1PBF

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14DIP

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IR2113-1PBF

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14DIP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2113-1PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [Max]	9.5 V
Logic Voltage - VIL, VIH [Min]	6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	7.62 mm
Package / Case	13 Leads
Package / Case	0.3 in
Package / Case	14-DIP
Rise / Fall Time (Typ) [custom]	25 ns
Rise / Fall Time (Typ) [custom]	17 ns
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	3.3 V

IR2113 Series

Part	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Supplier Device Package	Channel Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Number of Drivers	Package / Case [x]	Package / Case	Package / Case [y]	Gate Type	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Package / Case [custom]	Package / Case [custom]
Infineon Technologies 98-0247	Half-Bridge	600 V	16-SOIC	Independent	25 ns	17 ns	3.3 V	20 V	Surface Mount	150 °C	-40 °C	9.5 V	6 V	2	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A
Infineon Technologies IR2113-1PBF	Half-Bridge	600 V		Independent	25 ns	17 ns	3.3 V	20 V	Through Hole	150 °C	-40 °C	9.5 V	6 V	2		14-DIP		IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A	7.62 mm	13 Leads	0.3 in
Infineon Technologies 98-0119PBF	Half-Bridge	600 V	16-PDIP	Independent	25 ns	17 ns	3.3 V	20 V	Through Hole	150 °C	-40 °C	9.5 V	6 V	2		14 Leads 16-DIP		IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A				0.3 in	7.62 mm
Infineon Technologies IR2113PBF	Half-Bridge	600 V	14-DIP	Independent	25 ns	17 ns	3.3 V	20 V	Through Hole	150 °C	-40 °C	9.5 V	6 V	2	0.3 "	14-DIP	7.62 mm	IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A
Infineon Technologies IR2113STR	Half-Bridge	600 V	16-SOIC	Independent	25 ns	17 ns	3.3 V	20 V	Surface Mount	150 °C	-40 °C	9.5 V	6 V	2	0.295 in	16-SOIC	7.5 mm	IGBT N-Channel MOSFET	Non-Inverting	2 A	2 A
Infineon Technologies IR2113	Half-Bridge	600 V	14-DIP	Independent	25 ns	17 ns	3.3 V	20 V	Through Hole	150 °C	-40 °C	9.5 V	6 V	2	0.3 "	14-DIP	7.62 mm	IGBT MOSFET N-Channel MOSFET	Non-Inverting	2 A	2 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IR2113 Series

Half-Bridge Gate Driver IC Non-Inverting 14-PDIP

Documents

Technical documentation and resources