SPB16N50C3ATMA1

Obsolete

Infineon Technologies

MOSFET N-CH 560V 16A TO263-3

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Obsolete

Infineon Technologies

MOSFET N-CH 560V 16A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB16N50C3ATMA1

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	560 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Drain to Source Voltage (Vdss)	Technology	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type
Infineon Technologies SPB16N50C3ATMA1	560 V	MOSFET (Metal Oxide)	N-Channel	280 mOhm	66 nC	20 V	3.9 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	PG-TO263-3-2	-55 °C	150 °C	1600 pF	16 A	10 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 560 V 16A (Tc) 160W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources

No documents available