MOSFET N-CH 560V 16A TO263-3
| Part | Drain to Source Voltage (Vdss) | Technology | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Vgs(th) (Max) @ Id | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 560 V | MOSFET (Metal Oxide) | N-Channel | 280 mOhm | 66 nC | 20 V | 3.9 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | PG-TO263-3-2 | -55 °C | 150 °C | 1600 pF | 16 A | 10 V | Surface Mount |