
VRF152MP
ActiveMicrochip Technology
TRANS RF MOSFET N-CH 130V 20A 4-PIN STYLE M-174
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VRF152MP
ActiveMicrochip Technology
TRANS RF MOSFET N-CH 130V 20A 4-PIN STYLE M-174
Technical Specifications
Parameters and characteristics commom to parts in this series
Specification | VRF152MP | RF-MOSFET-140V Series |
---|---|---|
- | - | |
Configuration | N-Channel | 2 N-Channel (Dual), N-Channel |
Current - Test | 250 mA | 250 mA |
Current Rating (Amps) | 50 µA | 50 µA |
Frequency | 175 MHz | 175 MHz |
Gain | 14 dBi | 14 - 16 dB |
Package / Case | M174 | SOT-262A1, M174 |
Power - Output | 150 W | 150 - 300 W |
Supplier Device Package | M174 | M174 |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Voltage - Rated | 130 V | 130 V |
Voltage - Test | 50 V | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Microchip Direct | INSERTS | 1 | $ 214.29 | |
100 | $ 181.32 | |||
250 | $ 173.07 | |||
500 | $ 168.36 | |||
1000 | $ 163.67 | |||
5000 | $ 156.60 |
RF-MOSFET-140V Series
140V RF MOSFET
Part | Gain | Technology | Voltage - Rated | Current Rating (Amps) | Power - Output | Configuration | Frequency | Package / Case | Voltage - Test | Current - Test | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology VRF152G | 16 dB | MOSFET (Metal Oxide) | 130 V | 50 µA | 300 W | 2 N-Channel (Dual) | 175 MHz | SOT-262A1 | 50 V | ||
Microchip Technology VRF152GMP | |||||||||||
Microchip Technology VRF152GMP | |||||||||||
Microchip Technology VRF152 | 14 dBi | MOSFET (Metal Oxide) | 130 V | 50 µA | 150 W | N-Channel | 175 MHz | M174 | 50 V | 250 mA | M174 |
Microchip Technology VRF152MP | 14 dBi | MOSFET (Metal Oxide) | 130 V | 50 µA | 150 W | N-Channel | 175 MHz | M174 | 50 V | 250 mA | M174 |
Microchip Technology VRF152MP |
Description
General part information
RF-MOSFET-140V Series
The VRF family of RF MOSFETs includes improved replacements for
industry-standard RF transistors. They provide improved ruggedness by
increasing the Bvdss over 30 percent from the industry-standard 125V to 170V
Documents
Technical documentation and resources