BCR503E6393HTSA1

Obsolete

Infineon Technologies

TRANS PREBIAS NPN 50V SOT23

Search across all available documentation for this part.

Obsolete

Infineon Technologies

TRANS PREBIAS NPN 50V SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BCR503E6393HTSA1

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Resistors Included	R1 and R2
Supplier Device Package	PG-SOT23
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Emitter Base (R2)	Power - Max [Max]	Resistors Included
Infineon Technologies BCR503E6327HTSA1	SC-59 SOT-23-3 TO-236-3	Surface Mount	300 mV	NPN - Pre-Biased	100 nA	100 MHz	40	2.2 kOhm	500 mA	PG-SOT23	50 V	2.2 kOhms	330 mW
Infineon Technologies BCR503E6393HTSA1	SC-59 SOT-23-3 TO-236-3	Surface Mount	300 mV	NPN - Pre-Biased	100 nA	100 MHz	40	2.2 kOhm	500 mA	PG-SOT23	50 V	2.2 kOhms	330 mW	R1 and R2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 100 MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources