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BCR503E6327HTSA1 - TAIWAN SEMICONDUCTOR TSM2323CX RFG

BCR503E6327HTSA1

Infineon Technologies

DIGITAL TRANS, 50V, 2.2K/2.2K, SOT-23-3

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BCR503E6327HTSA1 - TAIWAN SEMICONDUCTOR TSM2323CX RFG

BCR503E6327HTSA1

Infineon Technologies

DIGITAL TRANS, 50V, 2.2K/2.2K, SOT-23-3

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBCR503E6327HTSA1
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]330 mW
Resistor - Base (R1)2.2 kOhm
Resistor - Emitter Base (R2)2.2 kOhms
Supplier Device PackagePG-SOT23
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.43
10$ 0.26
100$ 0.17
500$ 0.12
1000$ 0.11
Digi-Reel® 1$ 0.43
10$ 0.26
100$ 0.17
500$ 0.12
1000$ 0.11
Tape & Reel (TR) 3000$ 0.09
6000$ 0.09
9000$ 0.08
30000$ 0.07
75000$ 0.06
150000$ 0.06
NewarkEach (Supplied on Cut Tape) 1$ 0.34
10$ 0.21
25$ 0.18
50$ 0.16
100$ 0.13
250$ 0.12
500$ 0.10
1000$ 0.09

Description

General part information

BCR503 Series

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 500 mA 100 MHz 330 mW Surface Mount PG-SOT23

Documents

Technical documentation and resources