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IRLZ44NPBF - TO-220AB PKG

IRLZ44NPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 47 A, 0.022 OHM, TO-220AB, THROUGH HOLE

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IRLZ44NPBF - TO-220AB PKG

IRLZ44NPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 55 V, 47 A, 0.022 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRLZ44NPBF
Current - Continuous Drain (Id) @ 25°C47 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]48 nC
Input Capacitance (Ciss) (Max) @ Vds1700 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Rds On (Max) @ Id, Vgs22 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.82
10$ 1.16
100$ 0.78
500$ 0.62
1000$ 0.57
2000$ 0.52
5000$ 0.48
NewarkEach 1$ 1.40
10$ 0.88
100$ 0.64
500$ 0.56
1000$ 0.56
4000$ 0.53
10000$ 0.49

Description

General part information

IRLZ44 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources

No documents available