MOSFET, N-CH, 55V, 51A, TO-263 ROHS COMPLIANT: YES
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1620 pF | 16 V | 51 A | MOSFET (Metal Oxide) | 36 nC | 13.5 mOhm | 80 W | D2PAK | 55 V | N-Channel | -55 °C | 175 ░C | Surface Mount | 4.5 V 10 V | 3 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | |||
Infineon Technologies | 16 V | 47 A | MOSFET (Metal Oxide) | 48 nC | 22 mOhm | TO-220AB | 55 V | N-Channel | -55 °C | 175 ░C | Through Hole | 2 V | TO-220-3 | 1700 pF | 4 V | 10 V |