IPI072N10N3GXKSA1

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Infineon Technologies

MOSFET N-CH 100V 80A TO262-3

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Infineon Technologies

MOSFET N-CH 100V 80A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI072N10N3GXKSA1

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	4910 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	7.2 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package
Infineon Technologies IPI072N10N3GXKSA1	20 V	100 V	MOSFET (Metal Oxide)	3.5 V	7.2 mOhm	-55 °C	175 ░C	4910 pF	150 W	I2PAK TO-262-3 Long Leads TO-262AA	68 nC	Through Hole	6 V 10 V	N-Channel	PG-TO262-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3

Technical documentation and resources