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MOSFET N-CH 100V 80A TO262-3
| Part | Vgs (Max) | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 100 V | MOSFET (Metal Oxide) | 3.5 V | 7.2 mOhm | -55 °C | 175 ░C | 4910 pF | 150 W | I2PAK TO-262-3 Long Leads TO-262AA | 68 nC | Through Hole | 6 V 10 V | N-Channel | PG-TO262-3 |