EPC2031

Active

EPC

GANFET NCH 60V 31A DIE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

EPC2031

Active

EPC

GANFET NCH 60V 31A DIE

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.93
		10	$ 4.23
		100	$ 3.65
	Digi-Reel«	1	$ 4.93
		10	$ 4.23
		100	$ 3.65
	Tape & Reel (TR)	500	$ 3.65

Description

General part information

EPC20 Series

N-Channel 60 V 31A (Ta) Surface Mount Die

Documents

Technical documentation and resources

Datasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	EPC2031	EPC20 Series

Current - Continuous Drain (Id) @ 25¯C	-	3 A
Current - Continuous Drain (Id) @ 25°C	-	1.7 - 500 A
Current - Continuous Drain (Id) @ 25░C	31 A	31 A
Drain to Source Voltage (Vdss)	60 V	15 - 350 V
Drive Voltage (Max Rds On, Min Rds On)	-	5 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	-	0.12 - 18 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC	0.044 - 33 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF	8.4 - 4523 pF
Input Capacitance (Ciss) (Max) @ Vds	-	115 - 3267 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	125 - 150 °C
Operating Temperature [Min]	-40 °C	-40 °C
Package / Case	Die	Die
Rds On (Max) @ Id, Vgs	2.6 mOhm	1.1 - 550 mOhm
Rds On (Max) @ Id, Vgs	-	1.5 - 45 mOhm
Supplier Device Package	Die	Die
Technology	GaNFET (Gallium Nitride)	GaNFET (Gallium Nitride)
Vgs (Max)	-	6 V
Vgs (Max)	-	-5 - -4 V
Vgs(th) (Max) @ Id	2.5 V	2.5 V
Vgs(th) (Max) @ Id	-	2.5 V

EPC20 Series

GANFET N-CH 200V 48A DIE

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
EPC EPC2034	48 A	8.8 nC	Surface Mount	200 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V	950 pF	150 °C	-40 °C	6 V	-4 V	N-Channel	10 mOhm	Die
EPC EPC2044	9.4 A		Surface Mount	100 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel		Die	664 pF	10.5 mOhm
EPC EPC2024	90 A		Surface Mount	40 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V	2100 pF	150 °C	-40 °C	6 V	-4 V	N-Channel		Die		1.5 mOhm
EPC EPC2052	8.2 A		Surface Mount	100 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel	13.5 mOhm	Die	575 pF		4.5 nC
EPC EPC2030	31 A		Surface Mount	40 V	Die	GaNFET (Gallium Nitride)	2.5 V		1900 pF	150 °C	-40 °C			N-Channel	2.4 mOhm	Die			18 nC
EPC EPC2016	11 A		Surface Mount	100 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V	520 pF	125 ¯C	-40 °C	6 V	-5 V	N-Channel		Die		16 mOhm	5.2 nC
EPC EPC2065	60 A		Surface Mount	80 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel	3.6 mOhm	Die			12.2 nC
EPC EPC2039		2.4 nC	Surface Mount	80 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel	25 mOhm	Die	210 pF
EPC EPC2023	60 A		Surface Mount	30 V	Die	GaNFET (Gallium Nitride)								N-Channel	1.3 mOhm	Die	2300 pF
EPC EPC2055	29 A	8.5 nC	Surface Mount	40 V	Die	GaNFET (Gallium Nitride)	2.5 V	5 V		150 °C	-40 °C	6 V	-4 V	N-Channel	3.6 mOhm	Die	1111 pF