EPC20 Series

Manufacturer: EPC

Catalog

GANFET NCH 60V 31A DIE

Part	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25░C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]
EPC EPC2031	Die	150 °C	-40 °C	Surface Mount	N-Channel	2.5 V	1800 pF	31 A	17 nC	60 V	GaNFET (Gallium Nitride)	2.6 mOhm	Die
EPC EPC2070	Die	150 °C	-40 °C	Surface Mount	N-Channel	2.5 V	386 pF		2.5 nC	100 V	GaNFET (Gallium Nitride)	23 mOhm	Die	5 V	6 V	-4 V	1.7 A
EPC EPC2014C	Die	150 °C	-40 °C	Surface Mount	N-Channel	2.5 V	300 pF		2.5 nC	40 V	GaNFET (Gallium Nitride)	16 mOhm	Die	5 V	6 V	-4 V	10 A
EPC EPC2016	Die	125 ¯C	-40 °C	Surface Mount	N-Channel	2.5 V				100 V	GaNFET (Gallium Nitride)		Die	5 V	6 V	-5 V	11 A	16 mOhm	520 pF	5.2 nC
EPC EPC2012	Die	125 ¯C	-40 °C	Surface Mount	N-Channel		145 pF			200 V	GaNFET (Gallium Nitride)	100 mOhm	Die	5 V	6 V	-5 V	3 A			1.8 nC	2.5 V
EPC EPC2010	Die	125 ¯C	-40 °C	Surface Mount	N-Channel	2.5 V	540 pF			200 V	GaNFET (Gallium Nitride)	25 mOhm	Die	5 V	6 V	-4 V	12 A			7.5 nC
EPC EPC2021ENGR	Die	150 °C	-40 °C	Surface Mount	N-Channel	2.5 V	1700 pF			80 V	GaNFET (Gallium Nitride)	2.5 mOhm	Die	5 V	6 V	-4 V	60 A			15 nC
EPC EPC2015	Die	150 °C	-40 °C	Surface Mount	N-Channel	2.5 V	1200 pF			40 V	GaNFET (Gallium Nitride)	4 mOhm	Die	5 V	6 V	-5 V	33 A			11.6 nC
EPC EPC2069					N-Channel					40 V	GaNFET (Gallium Nitride)				6 V	-4 V
EPC EPC2038	Die	150 °C	-40 °C	Surface Mount	N-Channel	2.5 V	8.4 pF		0.044 nC	100 V	GaNFET (Gallium Nitride)	3.3 Ohm	Die	5 V	6 V	-4 V	500 mA